MDmesh™ M9 Family 600 V to 650 V MOSFETs
STMicroelectronics' MOSFETs enable increased power levels and higher power density for more compact solutions
STMicroelectronics' silicon-based M9 technology benefits from a multi-drain manufacturing process, allowing an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values among all silicon-based fast-switching superjunction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Features
- Best figure of merit (RDS(ON) x Qg) currently on the market
- Currently industry’s best RDS(ON) for 650 V voltage range
- Lowest Qg
- Higher reverse diode dv/dt and MOSFET dv/dt ruggedness
Benefits
- Higher power levels
- Increased power density and lower conduction losses
- High efficiency and low switching power losses
- High switching speed
- Increased robustness and reliability for more compact designs
