Diodes Corporation (Nasdaq: DIOD) today announced the launch of its first silicon carbide (SiC) Schottky barrier diodes (SBDs). The portfolio includes the DIODES DSCxxA065 series with eleven 650V rated (4A, 6A, 8A and 10A) products and the DIODES DSCxx120 series with eight 1200V rated (2A, 5A and 10A) products
The benefits of these wide-bandgap SBDs include significant improvements in efficiency and high-temperature reliability, while responding to the market's need for lower system implementation costs and reduced maintenance. These devices are suitable for AC-DC, DC-DC and DC-AC step-down converters, photovoltaic inverters, non-contact systems and industrial motor drive product applications. In addition, the devices are also suitable for a variety of other circuits, such as boost converters for power factor correction applications.
These SiC devices offer unprecedented product performance benefits to power supply designers with high efficiency performance over traditional silicon crystalline products, such as
- Low capacitive charge (QC) reduces switching losses to very low levels, thereby increasing the efficiency of high-speed switching product applications. Ideal for circuit designs with high power density and small total solution size.
- Low downstream voltage (VF) further improves efficiency and reduces power loss and operating costs.
- Reduced heat dissipation helps reduce overall system cooling budget.
- High surge current capability improves robustness for better system reliability, and excellent thermal performance reduces construction costs.
The devices are available in three package options, including surface mount TO252-2 (WX type), through-hole TO220AC (WX type), and ITO220AC (WX-NC type).
